Infineon Technologies and Nvidia have entered into a collaborative agreement to develop power conversion technology utilizing gallium nitride (GaN). This partnership focuses specifically on creating components capable of supporting 800VDC (volts direct current) data center rack architectures.
The move to 800VDC power systems is increasingly viewed as a pathway to improving energy efficiency within high-density data centers, particularly those supporting artificial intelligence and large-scale computational workloads. By integrating GaN-based power conversion, the companies aim to address the power management requirements of modern, high-performance infrastructure.
As data centers continue to scale, managing power delivery and conversion efficiency remains a critical engineering challenge. This development represents a strategic effort to leverage GaN semiconductor materials to meet the specific voltage demands of future-facing data center power distribution systems.
Source: Data Center Dynamics
Original article: https://www.datacenterdynamics.com/en/news/infineon-and-nvidia-to-develop-gallium-nitride-power-conversion-tech-for-800vdc-data-center-racks/
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